Masahiro Horita

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Speaker, Author, Co-Author

Fri. Sep 11, 2020 9:30 AM - 12:00 PM Z04

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[11a-Z04-1~9] 13.7 Compound and power electron devices and process technology

9:45 AM - 10:00 AM

[11a-Z04-2] Investigation of origin of E3 trap in n-type GaN homoepitaxially grown by MOVPE

〇Masahiro Horita^1,2, Tetsuo Narita³, Tetsu Kachi², Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Toyota Central R&D Labs.)