Yuta Ito

Speaker, Author, Co-Author

Fri. Sep 11, 2020 1:00 PM - 4:45 PM Z04

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[11p-Z04-1~14] 13.7 Compound and power electron devices and process technology

1:00 PM - 1:15 PM

△ [11p-Z04-1] Effect of beam current on the formation of defects by high-temperature implantation of Mg ions into GaN

〇Yuta Ito¹, Hirotaka Watanabe², Yuto Ando¹, Atsushi Tanaka^2,3, Manato Deki⁴, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.NIMS, 4.VBL Nagoya Univ., 5.ARC Nagoya Univ.)

▲