KyungEun Park

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Speaker, Author, Co-Author

Fri. Sep 11, 2020 12:30 PM - 2:45 PM Z10

Oral presentation
| 13 Semiconductors
| 13.3 Insulator technology

[11p-Z10-1~8] 13.3 Insulator technology

2:15 PM - 2:30 PM

▼ [11p-Z10-7] The floating-gate memory characteristics utilizing N-doped LaB₆ metal thin film and LaB_xN_y insulating layer

〇(DC)KyungEun Park¹, Hideki Kamata¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech.)