Chiahung Lin

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Speaker, Author, Co-Author

Wed. Sep 9, 2020 1:00 PM - 5:45 PM Z20

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-Z20-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:30 PM - 4:45 PM

[9p-Z20-12] Improvement in Electrical Characteristics of Ga₂O₃ Schottky Barrier Diodes depend on Growth Rate of Drift Layer

〇Chiahung Lin¹, Satoshi Masuya¹, Kengo Obayashi¹, Amutha Thangaraja¹, Quang Tu Thieu¹, Fumio Otsuka¹, Yuki Koishikawa¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal Technology)