Kentaro Kaneko

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Speaker, Author, Co-Author

Wed. Sep 9, 2020 1:00 PM - 5:45 PM Z20

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-Z20-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

5:15 PM - 5:30 PM

[9p-Z20-15] p-type α-(Ir,Ga)₂O₃with a band gap of more than 4 eV

〇Kentaro Kaneko¹, Yasuhisa Masuda¹, Isao Takahashi², Ryohei Kanno², Takashi Shinohe², Shizuo Fujita¹ (1.Kyoto Univ., 2.FLOSFIA Inc.)