Rie Togashi

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Speaker, Author, Co-Author

Wed. Sep 9, 2020 1:00 PM - 5:45 PM Z20

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-Z20-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

5:30 PM - 5:45 PM

[9p-Z20-16] Thermodynamic Study of Etching Characteristics of HVPE-In₂O₃ Layers by Hydrogen-Environment Anisotropic Thermal Etching

〇Rie Togashi¹, Ryo Kasaba¹, Yuki Ooe¹, Ken Goto², Yoshinao Kumagai², Akihiko Kikuchi¹ (1.Sophia Univ., 2.Tokyo Univ. of Agri. and Tech.)