Ryo Moriya

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Speaker, Author, Co-Author

Wed. Sep 9, 2020 1:00 PM - 5:45 PM Z20

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-Z20-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

1:45 PM - 2:00 PM

[9p-Z20-3] Study on deep level in Sn-doped α-Ga₂O₃ grown on m-face sapphire by using cathodoluminescence method

〇Ryo Moriya¹, Junjiro Kikawa¹, Isao Takahashi², Takashi Shinohe², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.FLOSFIA Inc.)