Makoto Kasu

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Speaker, Author, Co-Author

Wed. Sep 9, 2020 1:00 PM - 5:45 PM Z20

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-Z20-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:30 PM - 2:45 PM

[9p-Z20-5] High-Quality Vertical Bridgman-Grown β-Gallium Oxide Bulk Crystals Observed by Synchrotron X-ray Topography

〇Makoto Kasu¹, Sayleap Sdoeung¹, Takumi Kobayashi², Etsuko Ohba², Keigo Hoshikawa2^2,3 (1.Saga Univ., 2.Fujikoshi Machinery Corp., 3.Shinshu Univ.)

2:45 PM - 3:00 PM

[9p-Z20-6] Observation of Stacking Faults in HVPE β-Gallium Oxide Epilayers

〇Makoto Kasu¹, Sayleap Sdoeung¹, Kohei Sasaki², Satoshi Masuya², Katsumi Kawasaki³, Jun Hirabayashi³, Akito Kuramata² (1.Saga Univ., 2.Novel Crystal Technology, 3.TDK Corp.)

4:15 PM - 4:30 PM

[9p-Z20-11] Origin of Reverse Leakage Current in EFG β-Gallium Oxide Schottky Barrier Diodes Identified by Ultra-High Sensitive Emission Microscope

〇Makoto Kasu¹, Sayleap Sdoeung¹, Kohei Sasaki², Toshiyuki Oishi¹, Katsumi Kawasaki³, Jun Hirabayashi³, Akito Kuramata² (1.Saga Univ., 2.Novel Crystal Technology, 3.TDK Corp.)

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