[11a-Z02-1~11] 15.4 III-V-group nitride crystals

Fri. Sep 11, 2020 9:00 AM - 12:00 PM Z02

Mitsuru Funato(Kyoto Univ.), Atsushi Kobayashi(Univ. of Tokyo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

▲ [11a-Z02-1] Optical properties of top-down fabricated site-controlled GaN quantum disks

〇(M2)SIJIA XIA¹, Munetaka Arita², Yasuhiko Arakawa², Mark J. Holmes^1,2 (1.IIS, Univ. of Tokyo, 2.NanoQuine Univ. of Tokyo)

9:15 AM - 9:30 AM

▲ [11a-Z02-2] Enhanced single photon emission from a GaN quantum dot in a Bullseye structure

〇(M2)SIJIA XIA¹, Tomoyuki Aoki¹, Kang Gao², Munetaka Arita², Yasuhiko Arakawa², Mark J. Holmes^1,2 (1.IIS, Univ. of Tokyo, 2.NanoQuine Univ. of Tokyo)

9:30 AM - 9:45 AM

[11a-Z02-3] Simulation of spectral diffusion in gallium nitride quantum dots

〇(M2)Tsubasa Asai¹, Yasuhiko Arakawa², Mark Holmes¹ (1.IIS Univ. of Tokyo, 2.NanoQuine, Univ. of Tokyo)

9:45 AM - 10:00 AM

△ [11a-Z02-4] Design of GaN Waveguide Microcavity for Wide-Band Twin Photon Generation

〇Takumi Nagata¹, Soshi Umeda¹, Msahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Grad. Sch. of Eng., Osaka Univ.)

10:00 AM - 10:15 AM

[11a-Z02-5] Emission enhancement properties in InGaN/GaN nanocolumn plasmonics crystals
-Comparison with Au and Ag-

〇Takao Oto¹, Masato Namazuta¹, Koichi Okamoto², Rie Togashi³, Katsumi Kishino⁴ (1.Yamagata Univ., 2.Osaka Pref. Univ., 3.Sophia Univ., 4.Sophia Nanotech.)

10:30 AM - 10:45 AM

[11a-Z02-6] Cross-sectional shape control of GaN high-aspect fine nano-hole array by hydrogen environment anisotropic thermal etching (HEATE)

〇(M1)Koki Abe¹, Yuta Moriya¹, Yusei Kawasaki¹, Daichi Ito¹, Kentaro Kinoshita¹, Akihiko Kikuchi^1,2,3 (1.Sophia Univ., 2.Sophia Photonics Research Center, 3.Sophia Semiconductor Research Institute)

10:45 AM - 11:00 AM

[11a-Z02-7] Low-angle incident microchannel epitaxy of GaN using graphene mask by chemical beam epitaxy

〇Shigeya Naritsuka¹, Shun Takenaka¹, Takahiro Maruyama¹ (1.Meijo Univ.)

11:00 AM - 11:15 AM

[11a-Z02-8] Growth of GaN Film on ScAlMgO₄ Substrate by RF-MBE Ⅱ

〇(M1)Seiya Kayamoto¹, Takashi Fujii^1,2, Tsuguo Fukuda², Ryuichi Sugie³, Shinichiro Mouri¹, Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.Fukuda Crystal lab., 3.Toray Research Center, Inc.)

11:15 AM - 11:30 AM

[11a-Z02-9] GaN Layer Growth on Epitaxial Graphene using MF2DS

〇Riku Shamoto¹, Ryuichi Hirai¹, Tomohiro Katsuzaki¹, Akihiro Hashimoto¹ (1.Fukui Univ.)

11:30 AM - 11:45 AM

[11a-Z02-10] GaN Growth by using Repaired Multifunctional Two-Dimension Structures

〇Yusuke Mizuno¹, Riku Shamoto¹, Tomohiro Katsuzaki¹, Akihiro Hashimoto¹ (1.Fukui Univ.)

11:45 AM - 12:00 PM

[11a-Z02-11] InN/GaN double heterostructure grown on a quartz glass substrate at room temperature by RF-MBE

〇Taiki Ito¹, Masataka Toki¹, Shota Matsuo¹, Tosiki Makimoto¹ (1.Waseda Univ.)

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