Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11p-Z02-1~19] 15.4 III-V-group nitride crystals

Fri. Sep 11, 2020 1:00 PM - 6:15 PM Z02

Tsutomu Araki(Ritsumeikan Univ.), Shugo Nitta(Nagoya Univ.), Tomoyuki Tanikawa(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[11p-Z02-1] Relation between Crystallinity and Emission Property in RF-MBE Growth of GaN

〇Naozumi Tachibana¹, Mari Hashimoto¹, Tomohiro Yamaguchi¹, Tohru Honda¹, Takeyoshi Onuma¹ (1.Kogakuin Univ.)

1:15 PM - 1:30 PM

[11p-Z02-2] Impact of In Composition of Barrier Layer and Number of Periods on Emission Property of High-In-Content GaInN/GaInN MQWs Grown by RF-MBE

〇(M2)Ryosuke Yoshida¹, Hiroki Hirukawa¹, Soichiro Ohno¹, Kaigo Tahara¹, Tomohiro Yamaguchi¹, Takeyoshi Onuma¹, Tohru Honda¹ (1.Kogakuin Univ.)

1:30 PM - 1:45 PM

[11p-Z02-3] Effect of Si anti-surfactant on lattice relaxation during GaInN crystal growth on GaN

〇Haruka Yokoyama¹, Tomohiro Yamaguchi¹, Takuo Sasaki², Soichiro Ohno¹, Takanori Kiguchi³, Hiroki Hirukawa¹, Seiji Fujikawa², Masamitu Takahasi², Takeyoshi Onuma¹, Tohru Honda¹ (1.Kogakuin Univ., 2.QST, 3.Tohoku Univ.)

1:45 PM - 2:00 PM

[11p-Z02-4] Fabrication and characterization of high quality sputtered GaN film by low oxygen GaN target

〇Yuya Suemoto¹, Yoshihiro Ueoka¹, Masami Mesuda¹, Liwen Sang², Takahiro Nagata² (1.Tosoh co., 2.NIMS)

2:00 PM - 2:15 PM

[11p-Z02-5] Fabrication of GaN Thin Films by RF Magnetron Sputtering and The Pressure Dependence of Electrical Resistance

〇(M2)Yuki Saito¹, Takuya Miyamoto¹, Yuuki Sato¹, Tadashi Ohachi¹, Shinzo Yoshikado¹, Kikuro Takemoto², Hiroyuki Uno², Naoto Kimura², Masanori Takasaki² (1.Doshisha Univ., 2.Yamanaka Hutech Corp.)

2:15 PM - 2:30 PM

[11p-Z02-6] Growth of ultrathin InN films on Al-polar AlN and its application to field-effect transistors

Dayeaon Jeong¹, 〇Atsushi Kobayashi¹, Kohei Ueno¹, Hiroshi Fujioka¹ (1.The Univ. of Tokyo)

2:30 PM - 2:45 PM

[11p-Z02-7] Epitaxial Growth of GaN Thin Films on AlN/h-BN Buffer Layers by MBE

〇Fumiya Harata¹, Hideki Nakazawa¹, Hiroshi Okamoto¹, Masanobu Hiroki², Kazuhide Kumakura², Yasuyuki Kobayashi¹ (1.Hirosaki Univ., 2.NTT. Corp. NTT Basic Research Lab.)

2:45 PM - 3:00 PM

[11p-Z02-8] Improvement of Crystal Quality for Sputtered h-BN on Sapphire by High-Temperature Annealing

〇(M2)Ryoji Kataoka¹, Haruhiko Koizumi², Sho Iwayama¹, Hideto Miyake^1,3 (1.Grad. Sch. of RIS., Mie Univ., 2.SPORR, Mie Univ., 3.Grad. Sch. of Eng., Mie Univ.)

3:00 PM - 3:15 PM

[11p-Z02-9] Superconducting properties of NbN films coherently grown on AlN

〇Atsushi Kobayashi¹, Kohei Ueno¹, Hiroshi Fujioka¹ (1.The Univ. of Tokyo)

3:30 PM - 3:45 PM

△ [11p-Z02-10] MOVPE Growth of AlN on Annealed Sputtered AlN Templates with Nano Pattern

〇Yukino Iba¹, Kanako Shojiki¹, Shigeyuki Kuboya², Kenjiro Uesugi², Shiyu Xiao³, Hideto Miyake^3,1 (1.Grad. Sch. of Eng. Mie Univ., 2.SPORR Mie Univ., 3.Grad. Sch. of RIS Mie Univ.)

3:45 PM - 4:00 PM

[11p-Z02-11] MOVPE Growth of GaN Thin Films on Annealed Sputtered AlN Templates

〇(M2)Tatsuya Shirato¹, Kenjiro Uesugi², Shigeyuki Kuboya², Kanako Shojiki¹, Hideto Miyake^1,3 (1.Grad. Sch. of Eng., Mie Univ., 2.SPORR, Mie Univ., 3.Grad. Sch. of RIS., Mie Univ.)

4:00 PM - 4:15 PM

[11p-Z02-12] Growth of AlGaN/In_xGa_1-xN hetero structure on AlN template

〇Masatomo Sumiya¹, Yuki Takahara^1,2, Yasutaka Imanaka¹, Amira Alghamdi^1,3, Andersson Andersson³, Kanji Takehana¹, Akira Uedono² (1.NIMS, 2.Univ. of Tsukuba, 3.Flinders Univ.)

4:15 PM - 4:30 PM

[11p-Z02-13] Strain Relaxation in AlGaN Grown on Annealed Sputtered AlN by Introduction of Superlattices

〇Takafumi Inamori¹, Shoya Ishihara¹, Tatsuya Shirato¹, Shigeyuki Kuboya², Kanako Shojiki¹, Kenjiro Uesugi², Hideto Miyake^1,3 (1.Mie Univ. Grad. Sch. of Eng., 2.Mie Univ. SPORR., 3.Mie Univ. Grad. Sch. of RIS)

4:30 PM - 4:45 PM

△ [11p-Z02-14] Si concentration dependence of n-type AlInN/GaN distributed Bragg reflectors

〇Yusuke Ueshima¹, Tetsuro Inagaki¹, Ryosuke Iida¹, Sho Iwayama¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Fac. Sci. & Tech. Meijo Univ., 2.ARC. Nagoya Univ.)

5:00 PM - 5:15 PM

[11p-Z02-15] The process of the step bunching like morphology of GaN grown on free-standing substrate

〇Hirotaka Watanabe¹, Shugo Nitta¹, Yuto Ando², Manato Deki^2,3, Atsushi Tanaka^1,4, Yoshio Honda¹, Hiroshi Amano^1,3,4,5 (1.Nagoya Univ. IMaSS, 2.Dept. of Electronics.,Nagoya Univ., 3.Nagoya Univ. VBL, 4.NIMS, 5.Nagoya Univ. ARC)

5:15 PM - 5:30 PM

[11p-Z02-16] Growth and evaluation of N-polar AlN and AlGaN / AlN hetero-structures

〇Tadatoshi Ito¹, Kazuya Ataka¹, Ryota Sakamoto¹, Yongzhao Yao², Yukari Ishikawa², Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ., 2.JFCC)

5:30 PM - 5:45 PM

[11p-Z02-17] Study of high composition InGaN underlayer by facet growth

〇(M1)Naoya Nishi¹, Kawamura Rei¹, Kawamura Hiroshi¹, Harada Yuya², Tawarazako Yuya², Okada Narihito¹, Tadatomo Kazuyuki¹ (1.Grad. School of Sci. & Eng. for Innovation, Yamaguchi Univ., 2.Department of Eng., Yamaguchi Univ.)

5:45 PM - 6:00 PM

△ [11p-Z02-18] Orientation and stable side analysis of pits generated during GaN growth on Si substrates

〇Kazuya Okamoto¹, Momoko Deura¹, Takashi Yoda^2,4, Hideshi Takahashi², Kiyotaka Miyano², Masayuki Tsukui², Takeshi Momose¹, Masakazu Sugiyama^1,3, Yukihiro Shimogaki¹ (1.School Eng., The Univ. Tokyo, 2.NuFlare Technology, 3.RCAST, The Univ. Tokyo, 4.FIRST, Tokyo Tech.)

6:00 PM - 6:15 PM

[11p-Z02-19] Characterizations of crystal growth for the realization of nanowire-LD using GaInN/GaN multiple-quantum shell/tunnel junction

〇Naoki Sone^1,3, Renji Okuda³, Yoshiya Miyamoto³, Kazuma Ito³, Kazuyoshi Iida^2,3, Koji Okuno^2,3, Koichi Mizutani^2,3, Masaki Ohya^2,3, Weifang Lu³, Satoshi Kamiyama³, Tetsuya Takeuchi³, Motoaki Iwaya³, Isamu Akasaki^3,4 (1.KOITO MANUFACTURING Co., Ltd, 2.TOYODA GOSEI Co., Ltd, 3.Meijo Univ., 4.Nagoya Univ.)

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