Ryosuke Yoshida

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Speaker, Author, Co-Author

Fri. Sep 11, 2020 1:00 PM - 6:15 PM Z02

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[11p-Z02-1~19] 15.4 III-V-group nitride crystals

1:15 PM - 1:30 PM

[11p-Z02-2] Impact of In Composition of Barrier Layer and Number of Periods on Emission Property of High-In-Content GaInN/GaInN MQWs Grown by RF-MBE

〇(M2)Ryosuke Yoshida¹, Hiroki Hirukawa¹, Soichiro Ohno¹, Kaigo Tahara¹, Tomohiro Yamaguchi¹, Takeyoshi Onuma¹, Tohru Honda¹ (1.Kogakuin Univ.)