Oral presentation

17 Nanocarbon Technology » 17.2 Graphene

[9p-Z29-1~17] 17.2 Graphene

Wed. Sep 9, 2020 1:30 PM - 6:00 PM Z29

Masao Nagase(Tokushima Univ.), Hirokazu Fukidome(Tohoku Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[9p-Z29-1] [The 42nd JSAP Young Scientist Award Speech] Enhanced photogating via pyroelectric effect induced by insulator layer for high-responsivity long-wavelength infrared graphene-based photodetectors operating at room temperature

〇Masaaki Shimatani¹, Shinpei Ogawa¹, Shoichiro Fukushima¹, Satoshi Okuda¹, Yasushi Kanai², Takao Ono², Kazuhiko Matsumoto² (1.Mitsubishi Electric, 2.ISIR, Osaka Univ.)

1:45 PM - 2:00 PM

△ [9p-Z29-2] Dark current reduction of high-responsivity graphene/InSb heterojunction mid-IR sensors by photogating

〇Masaaki Shimatani¹, Shoichiro Fukushima¹, Satoshi Okuda¹, Shinpei Ogawa¹ (1.Mitsubishi Electric)

2:00 PM - 2:15 PM

△ [9p-Z29-3] Fabrication of small-format graphene infrared array sensors

〇Shoichiro Fukushima¹, Masaaki Shimatani¹, Satoshi Okuda¹, Shinpei Ogawa¹ (1.Mitsubishi Electric Corp.)

2:15 PM - 2:30 PM

▲ [9p-Z29-4] Electric Field Induced van der Waals Bonding Memory in Graphene Gas Sensors

〇(D)Osazuwa Gabriel Agbonlahor¹, Manoharan Muruganathan¹, Tomonori Imamura¹, Hiroshi Mizuta^1,2 (1.JAIST, 2.Hitachi Lab.)

2:30 PM - 2:45 PM

▲ [9p-Z29-5] Electrical characterization of suspended graphene nanoribbons fabricated by b-HF free process

〇AMIT BANERJEE¹, Osazuwa Agbonlahor¹, Manoharan Muruganathan¹, Hiroshi Mizuta¹ (1.JAIST)

2:45 PM - 3:00 PM

▲ [9p-Z29-6] Positive and Negative Electric Field Sensing in Graphene

〇(P)Afsal Kareekunnan¹, Tatsufumi Agari¹, Manoharan Muruganathan¹, Takeshi Kudo², Takeshi Maruyama², Hiroshi Mizuta^1,3 (1.JAIST, 2.Otowa Electric Co., Ltd., 3.Hitachi Cambridge Lab.)

3:00 PM - 3:15 PM

△ [9p-Z29-7] Improved NOX Gas Sensor Based on In2O3 Nanoparticles Modified Graphene Transistor

〇Ryota Isu¹, Akira Fujimoto¹, Yukiyasu Kashiwagi², Toshiyuki Tamai², Masatoshi Koyama¹, Kazuto Koike¹, Mitsuaki Yano¹ (1.NMRC, Osaka Inst., 2.ORIST.)

3:15 PM - 3:30 PM

△ [9p-Z29-8] Resistivity of graphene on SiC by water desorption

〇Tomoki Minami¹, Syuta Oti¹, Yasuhide Ohno¹, Masao Nagase¹ (1.Tokushima Univ.)

3:30 PM - 3:45 PM

[9p-Z29-9] A light emitter based on polycrystalline graphene patterned directly on silicon substrates from a solid-state carbon source

〇Kenta Nakagawa^1,2, Hidenori Takahashi², Yui Shimura², Hideyuki Maki^2,3 (1.KISTEC, 2.Keio Univ., 3.CSRN, Keio Univ.)

4:00 PM - 4:15 PM

[9p-Z29-10] High-order mode operation of graphene mechanical resonator

〇(M2)Hirofumi Ikemoto¹, Kaito Nakagawa¹, Taichi Inoue¹, Kuniharu Takei¹, Takayuki Arie¹, Seiji Akita¹ (1.Osaka Pref. Univ.)

4:15 PM - 4:30 PM

[9p-Z29-11] Improvement of load characteristics of lithium-ion secondary battery by using grinded graphene sheet as conductive additive

〇Norihiro Shimoi¹, Shinjiro Umeya² (1.Tohoku Inst., 2.KAMEYAMA Iron Works)

4:30 PM - 4:45 PM

▲ [9p-Z29-12] Dominant factor of improving carrier transport properties in multilayer graphene with a turbostratic stacking

〇YungKai Chou¹, Ryota Negishi^1,5, Chaopeng Wei¹, Yui Ogawa², Yoshitaka Taniyasu², Masashi Akabori³, Mojtahedzadeh Seyed Ali¹, Nobuya Mori¹, Kensaku Masuda⁴, Katsushi Hashimoto⁴, Yoshiro Hirayama⁴, Yoshihiro Kobayashi¹ (1.Osaka Univ., 2.NTT Basic Research Lab., 3.JAIST, 4.Tohoku Univ., 5.Toyo Univ.)

4:45 PM - 5:00 PM

[9p-Z29-13] Electronic structure of periodically modified graphene with various 2D Bravais latteces

〇Tomoya Ito¹, Susumu Saito¹ (1.Tokyo Tech)

5:00 PM - 5:15 PM

[9p-Z29-14] Crystallinity evaluation through the operation analysis of CVD-BLG/h-BN heterostructure FET

〇Wataru Nishiyama¹, Pablo Solis-Fernandez², Yuri Terao², Kenji Kawahara², Hiroki Ago², Tomonori Nishimura¹, Kosuke Nagashio¹ (1.Univ. Tokyo, 2.Kyushu Univ.)

5:15 PM - 5:30 PM

[9p-Z29-15] Effects of interactions at the interface between graphene and quantum dots on their electronic properties

〇Zen Inoue¹, Yasushi Ishiguro^1,2, Alexader Baranov³, Igor Nabiev⁴, Kazuyuki Takai^1,2 (1.Graduate school of Science and Engineering, Hosei Univ, 2.Department of Chemical Science and Technology, Hosei Univ, 3.ITMO Univercity, 4.MEPhI Univercity)

5:30 PM - 5:45 PM

[9p-Z29-16] Electrical transport of tetralayer graphene quantum dot device in perpendicular magnetic field

〇Taku Kato¹, Hirohito Ito¹, Takuya Iwasaki², Kenji Watanabe², Takashi Taniguchi², Satoshi Moriyama³, Tsuyoshi Hatano¹ (1.Nihon Univ., 2.NIMS, 3.Tokyo Deniki Univ.)

5:45 PM - 6:00 PM

[9p-Z29-17] Fabrication and characterization of twisted bilayer graphene for quantum device applications

〇(M1)Ryo Fukushima¹, Kohei Sakanashi¹, Naoto Wada¹, Kenji Watanabe², Takashi Taniguchi², Gil-Ho Kim³, Jonathan Bird⁴, Nobuyuki Aoki¹ (1.Chiba Univ., 2.NIMS, 3.SKKU, 4.SUNY Buffalo)

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