Oral presentation

[9a-Z01-1~6] 15.2 II-VI and related compounds

Wed. Sep 9, 2020 9:00 AM - 10:30 AM Z01

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[9a-Z01-1] Deposition and characterization of CdZnS window layers prepared by MOCVD in the air

〇Naoki Aso¹, Moemi Taki¹, Tamotsu Okamoto¹ (1.NIT, Kisarazu Coll.)

9:15 AM - 9:30 AM

[9a-Z01-2] Fabrication of Cu₂ZnSnSe₄ thin films by selenization of
stacked precursors containing ZnSe.

〇Ryoya Miyahara¹, Katsuhiko Saito¹, Qixin Guo¹, Tooru Tanaka¹ (1.Saga Univ.)

9:30 AM - 9:45 AM

[9a-Z01-3] Fabrication and characterization of ZnTe_1-xO_x thin films by molecular beam epitaxy for photocatalyst application.

〇Tomohiro Yoshinaga¹, Katsuhiko Saito¹, Qixin Guo¹, Sigeru Ikeda², Tooru Tanaka¹ (1.Saga Univ., 2.Konan Univ.)

9:45 AM - 10:00 AM

[9a-Z01-4] Device integration of ZnSe based organic-inorganic hybrid ultraviolet APD

〇Yuta Fujii¹, Yuki Ichikawa¹, Kaiki Nakamura¹, Kazuki Nakagawa¹, Kentarou Yoshida¹, Ryuichi Miyazaki¹, Yuya Tsuzi¹, Shumpei Yamamoto¹, Tomoki Abe¹, Kunio Ichino¹, Kazuaki Akaiwa¹ (1.Tottori Univ.)

10:00 AM - 10:15 AM

[9a-Z01-5] Fundamental investigation of p-side hetero-junctions in II-VI compound semiconductor laser diode structures on InP substrates

〇(M2)GuoXin Mi¹, Ichirou Nomura¹ (1.Sophia Univ.)

10:15 AM - 10:30 AM

△ [9a-Z01-6] Propetry Tuning of Wurtzite MgSnN2 by Cation Stoichiometry

〇Kenta Matsuura¹, Fumio Kawamura², Masataka Imura², Hidenobu Murata³, Naoomi Yamada¹ (1.Chubu Univ., 2.NIMS, 3.Osaka Pref Univ.)

Sessions

15 Crystal Engineering » 15.2 II-VI and related compounds

[9a-Z01-1~6] 15.2 II-VI and related compounds

[9a-Z01-1] Deposition and characterization of CdZnS window layers prepared by MOCVD in the air

[9a-Z01-2] Fabrication of Cu₂ZnSnSe₄ thin films by selenization of
stacked precursors containing ZnSe.

[9a-Z01-3] Fabrication and characterization of ZnTe_1-xO_x thin films by molecular beam epitaxy for photocatalyst application.

[9a-Z01-4] Device integration of ZnSe based organic-inorganic hybrid ultraviolet APD

[9a-Z01-5] Fundamental investigation of p-side hetero-junctions in II-VI compound semiconductor laser diode structures on InP substrates

△ [9a-Z01-6] Propetry Tuning of Wurtzite MgSnN2 by Cation Stoichiometry

Authenticate

Sessions

15 Crystal Engineering » 15.2 II-VI and related compounds

[9a-Z01-1~6] 15.2 II-VI and related compounds

[9a-Z01-1] Deposition and characterization of CdZnS window layers prepared by MOCVD in the air

[9a-Z01-2] Fabrication of Cu2ZnSnSe4 thin films by selenization ofstacked precursors containing ZnSe.

[9a-Z01-3] Fabrication and characterization of ZnTe1-xOx thin films by molecular beam epitaxy for photocatalyst application.

[9a-Z01-4] Device integration of ZnSe based organic-inorganic hybrid ultraviolet APD

[9a-Z01-5] Fundamental investigation of p-side hetero-junctions in II-VI compound semiconductor laser diode structures on InP substrates

△ [9a-Z01-6] Propetry Tuning of Wurtzite MgSnN2 by Cation Stoichiometry

Authenticate

[9a-Z01-2] Fabrication of Cu₂ZnSnSe₄ thin films by selenization of
stacked precursors containing ZnSe.

[9a-Z01-3] Fabrication and characterization of ZnTe_1-xO_x thin films by molecular beam epitaxy for photocatalyst application.