[10a-Z04-1~9] 13.7 Compound and power electron devices and process technology

[10a-Z04-3] Recess Length Dependence of Electrical Characteristics of GaN Gated-Anode Diodes

〇Hidemasa Takahashi¹, Yuji Ando¹, Ryohei Yamaguchi³, Akio Wakejima³, Jun Suda^1,2 (1.Nagoya Univ., 2.Naogya Univ. IMaSS, 3.Nagoya Institute of Technology)

Keywords:semiconductor, GaN, HEMT

A gated-anode diode using a normally-off GaN HEMT is under development for high power and high efficiency rectenna. In order to make the diode forward current If and the reverse breakdown voltage BVr compatible with each other, a recess gate type GaN GAD was fabricated and the recess length dependence of the electrical characteristics was investigated. It was confirmed that 2W-class half-wave rectification operation was possible.