[10a-Z04-1~9] 13.7 Compound and power electron devices and process technology

[10a-Z04-5] Temperature Properties of AlN Schottky Barrier Diodes

〇Masanobu Hiroki¹, Yoshitaka Taniyasu¹, Kazuhide Kumakura¹ (1.NTT BRL)

Keywords:AlN, Schottoky barrier

We clarified Schottky barrier height (SBH) of Ni/AlN Schottky barrier diodes (SBDs) from its temperature properties. SBH estimated from I-V characteristics using thermionic emission model increases from 1.8 to 2.8 eV as temperature increases from room temperature (T.T.) to 673K. Ideality factor decreased from 1.88 to 1.15. While SBH determined from C-V characteristics is about 3.2 eV, nearly constant in the range of temperature from R.T. to 573K. SBH from I-V characteristics is proportional to the inverse of temperature, resulting from the effect of barrier inhomogeneity. From these results, the plausible SBH of Ni/AlN is 2.8-3.2 eV.