The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[10a-Z20-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 10, 2020 9:00 AM - 12:15 PM Z20

Yutaka Furubayashi(Kochi Univ. of Tech.), Hiroyuki Nishinaka(Kyoto Inst. of Tech.)

12:00 PM - 12:15 PM

[10a-Z20-12] [The 42nd JSAP Young Scientist Award Speech] Hot carrier effects in InGaZnO thin-film transistor

Takanori Takahashi1, Ryoko Miyanaga1, Mami N. Fujii1, Jun Tanaka2, Kazushige Takechi2, Hiroshi Tanabe2, Juan Paolo Bermundo1, Yasuaki Ishikawa1,3, Yukiharu Uraoka1 (1.NAIST, 2.Tianma Japan, Ltd., 3.Aoyama Gakuin Univ.)

Keywords:oxide semiconductor, thin-film transistor, reliability