Oral presentation

[9a-Z20-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 9, 2020 9:00 AM - 12:00 PM Z20

Kohei Sasaki(Novel Crystal Technology), Fujii Mami(NAIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [9a-Z20-1] Solid-phase epitaxy of Ga₂O₃ thin films on MgAl₂O₄ substrates by excimer laser irradiation

〇Takumi Matsushima¹, Kazuki Watanabe¹, Tomoaki Oga¹, Nobuo Tsuchimine², Satoru Kaneko^3,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Tech, 2.TOSHIMA Manu., 3.KISTEC)

9:15 AM - 9:30 AM

△ [9a-Z20-2] Planarization in double-layered ELO α-Ga₂O₃ films for the device fabrication

〇Katsuaki Kawara¹, Yuichi Oshima², Mitsuru Okigawa¹, Takashi Shinohe¹ (1.FLOSFIA, 2.NIMS)

9:30 AM - 9:45 AM

△ [9a-Z20-3] Microstructure of a lattice-matched γ-(Al_xGa_1-x)₂O₃ alloy thin film on a spinel substrate grown by mist chemical vapor deposition

〇Ryuto Horie¹, Daisuke Tahara¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. Tech.)

9:45 AM - 10:00 AM

△ [9a-Z20-4] Growth and Characterization of rh-ITO Epitaxial Thin Films Without the Buffer Layer on the LiTaO₃ Substrate via Mist CVD Method.

〇Kazuki Shimazoe¹, Hiroyuki Nishinaka¹, Yuta Arata¹, Yusuke Ito¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

10:00 AM - 10:15 AM

△ [9a-Z20-5] Formation and characterization of GZO transparent conductive films on flexible substrates by using plasma-assisted molecular beam deposition (5)

〇(M1)Yohei Sato¹, Kosuke Nakata¹, Shuta Miyashita¹, Tsutomu Muranaka¹, Yoichi Nabetani¹, Takashi Matsumoto¹ (1.Univ. of Yamanashi)

10:30 AM - 10:45 AM

▼ [9a-Z20-6] Electric Field Thermopower Modulation Analyses of the Channel Thickness for SnO₂ Thin Film Transistors

〇(D)Doudou Liang^1,2, Binjie Chen³, Hai Jun Cho¹, Hiromichi Ohta¹ (1.RIES-Hokkaido Univ., 2.USTB, 3.IST-Hokkaido Univ.)

10:45 AM - 11:00 AM

△ [9a-Z20-7] Characteristics of amorphous carbon-doped In₂O₃ TFT under bias stress in air and N₂

〇Riku Kobayashi^1,2, Nabatame Toshihide², Onaya Takashi^1,2,3, Ohi Akihiko², Ikeda Naoki², Nagata Takahiro², Tsukagoshi Kazuhito², Ogura Atsushi^1,4 (1.Meiji Univ., 2.NIMS, 3.JSPS Research Fellow DC, 4.MREL)

11:00 AM - 11:15 AM

△ [9a-Z20-8] Low-temperature processed In-Ga-Zn-O thin-film-transistors with an anodize Al₂O₃ gate insulator

〇(M1)Shuya Kono¹, Marin Mori¹, Magari Yusaku^1,2, Furuta Mamoru^1,2 (1.Kochi Univ. of Tech., 2.Center for nanotech.)

11:15 AM - 11:30 AM

△ [9a-Z20-9] Evaluation of DUV Photoluminescence Lifetime in Rocksalt-structured MgZnO Films

〇Kanta Kudo¹, Kyohei Ishii², Mizuki Ono¹, Kentaro Kaneko², Tomohiro Yamaguchi¹, Kohei Shima³, Kazunobu Kojima³, Shizuo Fujita², Tohru Honda¹, Shigefusa Chichibu³, Takeyoshi Onuma¹ (1.Kogakuin Univ., 2.Kyoto Univ., 3.IMRAM-Tohoku Univ.)

11:30 AM - 11:45 AM

△ [9a-Z20-10] Design of ZnO/ZnMgO MQW Microcavity for Quantum Entangled Photon Pair Generation

〇Taketo Yano¹, Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Osaka Univ.)

11:45 AM - 12:00 PM

▼ [9a-Z20-11] Leakage current reduction in ZnO nanoparticle based near UV-LEDs

〇(M1C)RAJ DEEP¹, Yuki Konishi¹, Islam Mohammad Shafiqul¹, Jie Lin², Toshiyuki Yoshida¹, Yasuhisa Fujita^1,2 (1.Shimane Univ., 2.SNCC)

Oral presentation

[9p-Z20-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 9, 2020 1:00 PM - 5:45 PM Z20

Toshiyuki Kawaharamura(Kochi Univ. of Tech.), Takeyoshi Onuma(Kogakuin Univ.), Kentaro Kaneko(Kyoto Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:30 PM

[9p-Z20-1] [The 10th Compound Semiconductor Electronics Achievement Award Speech] Development of Novel Technologies in GaAs-, ZnSe-, and Oxide-Based Semiconductor Growths

〇Shizuo Fujita¹ (1.Kyoto Univ.)

1:30 PM - 1:45 PM

[9p-Z20-2] TEM Observation of Sn-doped m-plane α-Ga₂O₃

〇Hiroiki Hayakawa¹, Junjiroh Kikawa¹, Isao Takahashi², Takashi Shinohe², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.FLOSFIA)

1:45 PM - 2:00 PM

[9p-Z20-3] Study on deep level in Sn-doped α-Ga₂O₃ grown on m-face sapphire by using cathodoluminescence method

〇Ryo Moriya¹, Junjiro Kikawa¹, Isao Takahashi², Takashi Shinohe², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.FLOSFIA Inc.)

2:00 PM - 2:15 PM

[9p-Z20-4] Analyses of deep traps in n-type α-Ga₂O₃ by photocapacitance method

〇Hitoshi Takane¹, Kentaro Kaneko¹, Takashi Shinohe², Shizuo Fujita¹ (1.Kyoto Univ., 2.FLOSFIA INC.)

2:30 PM - 2:45 PM

[9p-Z20-5] High-Quality Vertical Bridgman-Grown β-Gallium Oxide Bulk Crystals Observed by Synchrotron X-ray Topography

〇Makoto Kasu¹, Sayleap Sdoeung¹, Takumi Kobayashi², Etsuko Ohba², Keigo Hoshikawa2^2,3 (1.Saga Univ., 2.Fujikoshi Machinery Corp., 3.Shinshu Univ.)

2:45 PM - 3:00 PM

[9p-Z20-6] Observation of Stacking Faults in HVPE β-Gallium Oxide Epilayers

〇Makoto Kasu¹, Sayleap Sdoeung¹, Kohei Sasaki², Satoshi Masuya², Katsumi Kawasaki³, Jun Hirabayashi³, Akito Kuramata² (1.Saga Univ., 2.Novel Crystal Technology, 3.TDK Corp.)

3:00 PM - 3:15 PM

[9p-Z20-7] Effect of supply temperature in crystal growth of β-Ga₂O₃ by direct synthesis method

〇Shota Kanmoto¹, Katsushi Nishino¹ (1.Tokushima univ.)

3:15 PM - 3:30 PM

[9p-Z20-8] Effects of Nitrogen-Ion Implantation on Responsivity Spectra of b-Ga₂O₃ Crystals

〇(M1)Masahiko Nakanishi¹, Man Hoi Wong², Tomohiro Yamaguchi¹, Tohru Honda¹, Masataka Higashiwaki², Takeyoshi Onuma^1,2 (1.Kogakuin Univ., 2.NICT)

3:30 PM - 3:45 PM

[9p-Z20-9] Local electronic structure of hydrogen in wide-gap semiconductor β-Ga₂O₃

〇Masatoshi Hiraishi¹, Hirotaka Okabe¹, Akihiro Koda^1,2, Ryosuke Kadono^1,2, Keisuke Ide³, Toshio Kamiya^3,4, Hideo Hosono^3,4 (1.KEK-IMSS, 2.Sokendai, 3.Tokyo Tech MSL, 4.Tokyo Tech (MCES))

3:45 PM - 4:00 PM

[9p-Z20-10] Microstructure of κ-Ga₂O₃thin films on (-201) β-Ga₂O₃ substrates by mist CVD

〇Yuki Kajita¹, Hiroyuki Nishinaka¹, Yuta Arata¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

4:15 PM - 4:30 PM

[9p-Z20-11] Origin of Reverse Leakage Current in EFG β-Gallium Oxide Schottky Barrier Diodes Identified by Ultra-High Sensitive Emission Microscope

〇Makoto Kasu¹, Sayleap Sdoeung¹, Kohei Sasaki², Toshiyuki Oishi¹, Katsumi Kawasaki³, Jun Hirabayashi³, Akito Kuramata² (1.Saga Univ., 2.Novel Crystal Technology, 3.TDK Corp.)

4:30 PM - 4:45 PM

[9p-Z20-12] Improvement in Electrical Characteristics of Ga₂O₃ Schottky Barrier Diodes depend on Growth Rate of Drift Layer

〇Chiahung Lin¹, Satoshi Masuya¹, Kengo Obayashi¹, Amutha Thangaraja¹, Quang Tu Thieu¹, Fumio Otsuka¹, Yuki Koishikawa¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal Technology)

4:45 PM - 5:00 PM

[9p-Z20-13] Effect of acetylacetonation in α-(AlGa)₂O₃ alloys grown by mist CVD

〇marika ohta¹, kazuyuki uno¹, ichiro tanaka¹ (1.Wakayama Univ.)

5:00 PM - 5:15 PM

[9p-Z20-14] Control of Al₂O₃ Surface Morphology using Plasma-Assisted Molecular Beam Epitaxy

〇(PC)Riena Jinno¹, Hironori Okumura¹ (1.Tsukuba Univ.)

5:15 PM - 5:30 PM

[9p-Z20-15] p-type α-(Ir,Ga)₂O₃with a band gap of more than 4 eV

〇Kentaro Kaneko¹, Yasuhisa Masuda¹, Isao Takahashi², Ryohei Kanno², Takashi Shinohe², Shizuo Fujita¹ (1.Kyoto Univ., 2.FLOSFIA Inc.)

5:30 PM - 5:45 PM

[9p-Z20-16] Thermodynamic Study of Etching Characteristics of HVPE-In₂O₃ Layers by Hydrogen-Environment Anisotropic Thermal Etching

〇Rie Togashi¹, Ryo Kasaba¹, Yuki Ooe¹, Ken Goto², Yoshinao Kumagai², Akihiko Kikuchi¹ (1.Sophia Univ., 2.Tokyo Univ. of Agri. and Tech.)

Oral presentation

[10a-Z20-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 10, 2020 9:00 AM - 12:15 PM Z20

Yutaka Furubayashi(Kochi Univ. of Tech.), Hiroyuki Nishinaka(Kyoto Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[10a-Z20-1] Fabrication of Zinc Oxide thin films grown on PET films by Electrochemical Deposition

〇(M1)Masataka Katsuumi¹, Chinatsu Higuchi¹, Yohei Kasuya¹, Naoko Jotaki¹, Tetsuya Akasaka¹ (1.Meisei Univ.)

9:15 AM - 9:30 AM

[10a-Z20-2] Etching characteristics of (0001)ZnO single crystal and fabrication of nanostructures
by hydrogen environment anisotropic etching technique (HEATE)

〇Daichi Ito¹, Yuta Moriya¹, Akihiko Kikuchi^1,2,3 (1.Sophia Univ., 2.Sophia Photonics Research Center, 3.Sophia Semiconductor Research Inst.)

9:30 AM - 9:45 AM

[10a-Z20-3] Epitaxial growth and optical characterization of flexible ZnO thin films using mist chemical vapor deposition

〇Yuta Arata¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech)

9:45 AM - 10:00 AM

[10a-Z20-4] A study of electronic properties on n type ZnO by micro-Raman imaging and spectral analysis in high temperatures

〇(M1)Minato Kaetsu¹, Jun Suda¹ (1.Chukyo Univ.)

10:00 AM - 10:15 AM

[10a-Z20-5] Growth of single crystal Cu2O strip in CuO film by µCLBS method

〇Kaisei Ohtoge¹, Wenchang Yeh¹, Nobuhiko Kobayashi² (1.Shimane Univ., 2.Univ. of California Santa Cruz)

10:15 AM - 10:30 AM

[10a-Z20-6] Photoelectrochemical properties of SrTiO₃(100) loaded with Pt

〇(M2)Soraya Shizumi¹, Imazeki Yuki¹, Sato Masahiro², Fujii Katsushi³, Minegishi Tsutomu², Nakano Yoshiaki¹, Sugiyama Masakazu² (1.Univ. Tokyo., 2.RCAST, Univ. Tokyo., 3.RIKEN)

10:45 AM - 11:00 AM

[10a-Z20-7] Epitaxial growth of Co-incorporated NiO by sol-gel dip method

〇Takashi Yasuda¹, Kenji Shirashima¹, Tomoyuki Iki¹ (1.ISU)

11:00 AM - 11:15 AM

[10a-Z20-8] TEM observation of epitaxial NiO thin films deposited by RF reactive magnetron sputtering

〇Keisuke Nishimoto¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci, 2.RIST)

11:15 AM - 11:30 AM

[10a-Z20-9] Origin of high Hall mobility of W-doped In₂O₃ films

〇Yutaka Furubayashi¹, Makoto Maehara², Toshiyuki Sakemi², Hisashi Kitami^1,2, Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., 2.Sumitomo Heavy Ind., Ltd.)

11:30 AM - 11:45 AM

[10a-Z20-10] Repeated bending durability characterization of oxide thin films toward flexible device applications

〇Toshihiro Kumatani¹, Kazuyori Oura¹, Hideo Wada¹, Masatoshi Koyama¹, Toshihiko Maemoto¹, Shigehiko Sasa¹ (1.Osaka Inst. of Tech.)

11:45 AM - 12:00 PM

[10a-Z20-11] Surface and bulk electronic states in hydrogenated In-Ga-Zn-O films

〇Yusaku Magari^1,2, Kentaro Masuda¹, Hisao Makino^1,2, Mamoru Furuta^1,2 (1.Kochi Univ. of Tech., 2.Center for nanotech.)

12:00 PM - 12:15 PM

[10a-Z20-12] [The 42nd JSAP Young Scientist Award Speech] Hot carrier effects in InGaZnO thin-film transistor

〇Takanori Takahashi¹, Ryoko Miyanaga¹, Mami N. Fujii¹, Jun Tanaka², Kazushige Takechi², Hiroshi Tanabe², Juan Paolo Bermundo¹, Yasuaki Ishikawa^1,3, Yukiharu Uraoka¹ (1.NAIST, 2.Tianma Japan, Ltd., 3.Aoyama Gakuin Univ.)

Sessions

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9a-Z20-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [9a-Z20-1] Solid-phase epitaxy of Ga2O3 thin films on MgAl2O4 substrates by excimer laser irradiation

△ [9a-Z20-2] Planarization in double-layered ELO α-Ga2O3 films for the device fabrication

△ [9a-Z20-3] Microstructure of a lattice-matched γ-(AlxGa1-x)2O3 alloy thin film on a spinel substrate grown by mist chemical vapor deposition

△ [9a-Z20-4] Growth and Characterization of rh-ITO Epitaxial Thin Films Without the Buffer Layer on the LiTaO3 Substrate via Mist CVD Method.

△ [9a-Z20-5] Formation and characterization of GZO transparent conductive films on flexible substrates by using plasma-assisted molecular beam deposition (5)

▼ [9a-Z20-6] Electric Field Thermopower Modulation Analyses of the Channel Thickness for SnO2 Thin Film Transistors

△ [9a-Z20-7] Characteristics of amorphous carbon-doped In2O3 TFT under bias stress in air and N2

△ [9a-Z20-8] Low-temperature processed In-Ga-Zn-O thin-film-transistors with an anodize Al2O3 gate insulator

△ [9a-Z20-9] Evaluation of DUV Photoluminescence Lifetime in Rocksalt-structured MgZnO Films

△ [9a-Z20-10] Design of ZnO/ZnMgO MQW Microcavity for Quantum Entangled Photon Pair Generation

▼ [9a-Z20-11] Leakage current reduction in ZnO nanoparticle based near UV-LEDs

[9p-Z20-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[10a-Z20-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Authenticate

△ [9a-Z20-1] Solid-phase epitaxy of Ga₂O₃ thin films on MgAl₂O₄ substrates by excimer laser irradiation

△ [9a-Z20-2] Planarization in double-layered ELO α-Ga₂O₃ films for the device fabrication

△ [9a-Z20-3] Microstructure of a lattice-matched γ-(Al_xGa_1-x)₂O₃ alloy thin film on a spinel substrate grown by mist chemical vapor deposition

△ [9a-Z20-4] Growth and Characterization of rh-ITO Epitaxial Thin Films Without the Buffer Layer on the LiTaO₃ Substrate via Mist CVD Method.

▼ [9a-Z20-6] Electric Field Thermopower Modulation Analyses of the Channel Thickness for SnO₂ Thin Film Transistors

△ [9a-Z20-7] Characteristics of amorphous carbon-doped In₂O₃ TFT under bias stress in air and N₂

△ [9a-Z20-8] Low-temperature processed In-Ga-Zn-O thin-film-transistors with an anodize Al₂O₃ gate insulator