The 81st JSAP Autumn Meeting, 2020

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-Z20-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 9, 2020 1:00 PM - 5:45 PM Z20

Toshiyuki Kawaharamura(Kochi Univ. of Tech.), Takeyoshi Onuma(Kogakuin Univ.), Kentaro Kaneko(Kyoto Univ.)

1:45 PM - 2:00 PM

[9p-Z20-3] Study on deep level in Sn-doped α-Ga2O3 grown on m-face sapphire by using cathodoluminescence method

〇Ryo Moriya1, Junjiro Kikawa1, Isao Takahashi2, Takashi Shinohe2, Tsutomu Araki1 (1.Ritsumeikan Univ., 2.FLOSFIA Inc.)

Keywords:gallium oxide, deep level, cathodoluminescence

α-Ga2O3 is a new wide-band-gap semiconductor which is expected to be applied to power devices. It is reported that there is the anisotropy of electron transport property and the mobility is higher the m-plane than the c-plane. However, little is known the deep level of Sn-doped m-face α-Ga2O3. We reported the results of evaluating the relationship between the Sn concentration and the deep level using the cathodoluminescence method.