The 81st JSAP Autumn Meeting, 2020

Presentation information

Print

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-Z20-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 9, 2020 1:00 PM - 5:45 PM Z20

Toshiyuki Kawaharamura(Kochi Univ. of Tech.), Takeyoshi Onuma(Kogakuin Univ.), Kentaro Kaneko(Kyoto Univ.)

2:30 PM - 2:45 PM

[9p-Z20-5] High-Quality Vertical Bridgman-Grown β-Gallium Oxide Bulk Crystals Observed by Synchrotron X-ray Topography

〇Makoto Kasu1, Sayleap Sdoeung1, Takumi Kobayashi2, Etsuko Ohba2, Keigo Hoshikawa22,3 (1.Saga Univ., 2.Fujikoshi Machinery Corp., 3.Shinshu Univ.)

Keywords:gallium oxide, X-ray topography

By Sychrotoron X-ray topography, we have confirmed high quality of 2-inch VB-grown beta-Gallium oxide bulk.