[10a-Z20-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[10a-Z20-9] Origin of high Hall mobility of W-doped In₂O₃ films

〇Yutaka Furubayashi¹, Makoto Maehara², Toshiyuki Sakemi², Hisashi Kitami^1,2, Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., 2.Sumitomo Heavy Ind., Ltd.)

Keywords:indium oxide, Hall mobility, mass density of film

W-doped In₂O₃ (IWO) film, which has a larger Hall mobility (μ_H) than Sn-doped In₂O₃ (ITO), is a promising candidate for a top electrode of solar cells. However, the origin of its μ_H is still unknown. In this study, we investigated mass density and electric properties of ultrathin IWO and ITO films grown by reactive plasma deposition. We found that a higher bond disossiation energy of W-O than that of Sn-O is a key factor of the high μ_H for IWO films.