[9a-Z20-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [9a-Z20-2] Planarization in double-layered ELO α-Ga₂O₃ films for the device fabrication

〇Katsuaki Kawara¹, Yuichi Oshima², Mitsuru Okigawa¹, Takashi Shinohe¹ (1.FLOSFIA, 2.NIMS)

Keywords:gallium oxide, Ga2O3, ELO

Alpha-gallium oxide (α-Ga₂O₃) is one of the most promising materials for the power device semiconductor. Epitaxial lateral overgrowth (ELO) techniques enable us to reduce the threading dislocations in α-Ga₂O₃ grown on sapphire substrates. Thus far, we demonstrated ELO α-Ga₂O₃ with a low density of threading dislocations (<5×10⁶ cm^–3) by the double-layered ELO technique in which the ELO procedure was performed twice so that the second ELO mask covered the first ELO windows. In this study, we planarized the double-layered ELO films by improving the mask patterns and so on to apply the α-Ga₂O₃ to the device fabrication.