The 81st JSAP Autumn Meeting, 2020

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[10a-Z20-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 10, 2020 9:00 AM - 12:15 PM Z20

Yutaka Furubayashi(Kochi Univ. of Tech.), Hiroyuki Nishinaka(Kyoto Inst. of Tech.)

10:45 AM - 11:00 AM

[10a-Z20-7] Epitaxial growth of Co-incorporated NiO by sol-gel dip method

〇Takashi Yasuda1, Kenji Shirashima1, Tomoyuki Iki1 (1.ISU)

Keywords:oxide semiconductor, NiO, CoO

We describe NiCoO epitaxial growth on MgO substrate by sol-gel dip method.