The 81st JSAP Autumn Meeting, 2020

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-Z20-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 9, 2020 1:00 PM - 5:45 PM Z20

Toshiyuki Kawaharamura(Kochi Univ. of Tech.), Takeyoshi Onuma(Kogakuin Univ.), Kentaro Kaneko(Kyoto Univ.)

5:15 PM - 5:30 PM

[9p-Z20-15] p-type α-(Ir,Ga)2O3 with a band gap of more than 4 eV

〇Kentaro Kaneko1, Yasuhisa Masuda1, Isao Takahashi2, Ryohei Kanno2, Takashi Shinohe2, Shizuo Fujita1 (1.Kyoto Univ., 2.FLOSFIA Inc.)

Keywords:corundum, Iridium oxide