The 81st JSAP Autumn Meeting, 2020

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-Z20-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 9, 2020 1:00 PM - 5:45 PM Z20

Toshiyuki Kawaharamura(Kochi Univ. of Tech.), Takeyoshi Onuma(Kogakuin Univ.), Kentaro Kaneko(Kyoto Univ.)

3:45 PM - 4:00 PM

[9p-Z20-10] Microstructure of κ-Ga2O3thin films on (-201) β-Ga2O3 substrates by mist CVD

〇Yuki Kajita1, Hiroyuki Nishinaka1, Yuta Arata1, Masahiro Yoshimoto1 (1.Kyoto Inst. of Tech.)

Keywords:wide-bandgap semiconductor, gallium oxide, mist chemical vapor deposition