[10a-Z20-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[10a-Z20-4] A study of electronic properties on n type ZnO by micro-Raman imaging and spectral analysis in high temperatures

〇(M1)Minato Kaetsu¹, Jun Suda¹ (1.Chukyo Univ.)

Keywords:widegap semiconductor

As an ideal material for high-power devices, properties of n-type ZnO single crystals with widegap of 3.3eV and a high saturation electron speed, are significant to its practical applications. Since they use the widegap semiconductor of high-power device for EV in higher temperatures than 200℃ in general, the information for electronic properties of n type ZnO in high temperaures would lead to develop the high-power devices with n-type ZnO. In this study, we perform 3D-Raman imaging measurements on n-type ZnO single crystals in high temperatures and calculate electrronic properties (values of electronic density, electroic moblity and electric resistivity) in 200℃ by both Raman measurement and spectral analysis for LOPC mode (A₁(LO)/E₁(LO) ) using dielectric dispersions.