Keywords:HfO2, Epitaxial growth, Interface state
HfO2-based ferroelectrics have been attracting attention because they show ferroelectricity even in ultra-thin films of 10 nm or less by stabilizing the orthorhombic phase and are highly compatible with CMOS processes. However, problems such as the characteristic distribution between devices due to polycrystalline growth and the increase in threshold voltage caused by the formation of the interface layer at the HfO2/Si interface have become apparent. Therefore, the technique of suppressing the formation of the interface layer and the interface state and epitaxially growing the orthorhombic HfO2 directly on Si is extremely important. In this talk, I investigated the interfacial dielectric properties of Y:HfO2 epitaxial thin films directly on Si substrate.