Oral presentation

[10a-Z24-1~12] 【CS.5】 Code-sharing Session of 6.1 & 13.3 & 13.5

Thu. Sep 10, 2020 8:45 AM - 12:00 PM Z24

Hironori Fujisawa(Univ. of Hyogo), Shosuke Fujii(Kioxia)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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8:45 AM - 9:00 AM

[10a-Z24-1] Interfacial dielectric properties of Y:HfO₂ epitaxial thin films directly on Si substrate

〇Yuki Saho¹, Takarae Syuya¹, Takada Kenshi¹, Yoshimura Takeshi¹, Fujimura Norifumi¹ (1.Osaka Pref. Univ.)

9:00 AM - 9:15 AM

[10a-Z24-2] Crystallization process of metastable Al-doped HfO₂ films
directly on Si by atomic layer depositio

〇Shuya Takarae¹, Daisuke Kiriya¹, Takeshi Yoshimura¹, Atushi Ashida¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

9:15 AM - 9:30 AM

[10a-Z24-3] A preliminary study on ferroelectric synaptic device using mist CVD-derived Hf_1-xZr_xO₂ ferroelectric thin film

〇(M1)Yuki Fujiwara¹, Daisuke Tahara¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹, Minoru Noda¹ (1.Kyoto Inst. Tech.)

9:30 AM - 9:45 AM

△ [10a-Z24-4] Fabrication of MFSFET with ferroelectric non-doped HfO₂ utilizing Hf interfacial layer

〇Masaki Hayashi¹, Masakazu Kataoka¹, Min Gee Kim¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

9:45 AM - 10:00 AM

△ [10a-Z24-5] Preparation of HfO₂-based ferroelectric thick films at room temperature by the sputtering method and their electrical and piezoelectric properties

〇(PC)Reijiro Shimura¹, Takanori Mimura¹, Akinori Tateyama¹, Takao Shimizu¹, Hiroshi Funakubo¹ (1.Tokyo Tech. SMCT)

10:00 AM - 10:15 AM

▼ [10a-Z24-6] Ferroelectric Properties of Hafnium-Zirconium-Dioxide Prepared by Chemical Solution Process for MFM and MFS Structures

〇(D)Mohit Mohit¹, Eisuke Tokumitsu¹ (1.School of Materials Science, JAIST)

10:30 AM - 10:45 AM

[10a-Z24-7] Charging-induced stability of ferroelectric orthorhombic HfO₂ film: first-principles study

〇Kazuaki Arai¹, Yuto Shiraishi¹, Masaaki Araidai², Kenji Shiraishi², Takashi Nakayama¹ (1.Chiba Univ., 2.Nagoya Univ.)

10:45 AM - 11:00 AM

[10a-Z24-8] Improvement of ferroelectricity of thick ferroelectric films using Hf_xZr_1−xO₂/ZrO₂ stack structure

〇Takashi Onaya^1,2,3,4, Toshihide Nabatame², Mari Inoue², Yong Chan Jung³, Heber Hernandez-Arriaga³, Jaidah Mohan³, Harrison S. Kim³, Naomi Sawamoto¹, Takahiro Nagata², Jiyoung Kim³, Atsushi Ogura^1,5 (1.Meiji Univ., 2.NIMS, 3.UT Dallas, 4.JSPS Research Fellow DC, 5.MREL)

11:00 AM - 11:15 AM

[10a-Z24-9] ZrHf-oxide formation by Oxidation of Zr/Hf stacks and crystalline phase control

〇Ryosuke Hasegawa¹, Noriyuki Taoka¹, Akio Ohta¹, Katsunori Makihara¹, Mitsuhisa Ikeda¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

11:15 AM - 11:30 AM

▲ [10a-Z24-10] Thickness dependence of antiferroelectricity in ALD ultrathin ZrO₂ films

〇(D)Xuan Luo¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo)

11:30 AM - 11:45 AM

▼ [10a-Z24-11] Reliability characteristics of Ferroelectric-HfO2 capacitor with IGZO capping for 3D structure non-volatile memory application

〇FEI MO¹, Takuya Saraya¹, Toshiro Hiramoto¹, Masaharu Kobayashi^1,2 (1.IIS, Univ. of Tokyo, 2.D.lab,Univ. of Tokyo)

11:45 AM - 12:00 PM

[10a-Z24-12] Investigation of Polarization-Induced Inversion Charge Density in Si Ferroelectric FETs

〇Kasidit Toprasertpong¹, Zaoyang Lin¹, Tsung-En Lee¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

Sessions

CS Code-sharing session » 【CS.5】 Code-sharing Session of 6.1 & 13.3 & 13.5

[10a-Z24-1~12] 【CS.5】 Code-sharing Session of 6.1 & 13.3 & 13.5

[10a-Z24-1] Interfacial dielectric properties of Y:HfO₂ epitaxial thin films directly on Si substrate

[10a-Z24-2] Crystallization process of metastable Al-doped HfO₂ films
directly on Si by atomic layer depositio

[10a-Z24-3] A preliminary study on ferroelectric synaptic device using mist CVD-derived Hf_1-xZr_xO₂ ferroelectric thin film

△ [10a-Z24-4] Fabrication of MFSFET with ferroelectric non-doped HfO₂ utilizing Hf interfacial layer

△ [10a-Z24-5] Preparation of HfO₂-based ferroelectric thick films at room temperature by the sputtering method and their electrical and piezoelectric properties

▼ [10a-Z24-6] Ferroelectric Properties of Hafnium-Zirconium-Dioxide Prepared by Chemical Solution Process for MFM and MFS Structures

[10a-Z24-7] Charging-induced stability of ferroelectric orthorhombic HfO₂ film: first-principles study

[10a-Z24-8] Improvement of ferroelectricity of thick ferroelectric films using Hf_xZr_1−xO₂/ZrO₂ stack structure

[10a-Z24-9] ZrHf-oxide formation by Oxidation of Zr/Hf stacks and crystalline phase control

▲ [10a-Z24-10] Thickness dependence of antiferroelectricity in ALD ultrathin ZrO₂ films

▼ [10a-Z24-11] Reliability characteristics of Ferroelectric-HfO2 capacitor with IGZO capping for 3D structure non-volatile memory application

[10a-Z24-12] Investigation of Polarization-Induced Inversion Charge Density in Si Ferroelectric FETs

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Sessions

CS Code-sharing session » 【CS.5】 Code-sharing Session of 6.1 & 13.3 & 13.5

[10a-Z24-1~12] 【CS.5】 Code-sharing Session of 6.1 & 13.3 & 13.5

[10a-Z24-1] Interfacial dielectric properties of Y:HfO2 epitaxial thin films directly on Si substrate

[10a-Z24-2] Crystallization process of metastable Al-doped HfO2 filmsdirectly on Si by atomic layer depositio

[10a-Z24-3] A preliminary study on ferroelectric synaptic device using mist CVD-derived Hf1-xZrxO2 ferroelectric thin film

△ [10a-Z24-4] Fabrication of MFSFET with ferroelectric non-doped HfO2 utilizing Hf interfacial layer

△ [10a-Z24-5] Preparation of HfO2-based ferroelectric thick films at room temperature by the sputtering method and their electrical and piezoelectric properties

▼ [10a-Z24-6] Ferroelectric Properties of Hafnium-Zirconium-Dioxide Prepared by Chemical Solution Process for MFM and MFS Structures

[10a-Z24-7] Charging-induced stability of ferroelectric orthorhombic HfO2 film: first-principles study

[10a-Z24-8] Improvement of ferroelectricity of thick ferroelectric films using HfxZr1−xO2/ZrO2 stack structure

[10a-Z24-9] ZrHf-oxide formation by Oxidation of Zr/Hf stacks and crystalline phase control

▲ [10a-Z24-10] Thickness dependence of antiferroelectricity in ALD ultrathin ZrO2 films

▼ [10a-Z24-11] Reliability characteristics of Ferroelectric-HfO2 capacitor with IGZO capping for 3D structure non-volatile memory application

[10a-Z24-12] Investigation of Polarization-Induced Inversion Charge Density in Si Ferroelectric FETs

Authenticate

[10a-Z24-1] Interfacial dielectric properties of Y:HfO₂ epitaxial thin films directly on Si substrate

[10a-Z24-2] Crystallization process of metastable Al-doped HfO₂ films
directly on Si by atomic layer depositio

[10a-Z24-3] A preliminary study on ferroelectric synaptic device using mist CVD-derived Hf_1-xZr_xO₂ ferroelectric thin film

△ [10a-Z24-4] Fabrication of MFSFET with ferroelectric non-doped HfO₂ utilizing Hf interfacial layer

△ [10a-Z24-5] Preparation of HfO₂-based ferroelectric thick films at room temperature by the sputtering method and their electrical and piezoelectric properties

[10a-Z24-7] Charging-induced stability of ferroelectric orthorhombic HfO₂ film: first-principles study

[10a-Z24-8] Improvement of ferroelectricity of thick ferroelectric films using Hf_xZr_1−xO₂/ZrO₂ stack structure

▲ [10a-Z24-10] Thickness dependence of antiferroelectricity in ALD ultrathin ZrO₂ films