The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

CS Code-sharing session » 【CS.5】 Code-sharing Session of 6.1 & 13.3 & 13.5

[10a-Z24-1~12] 【CS.5】 Code-sharing Session of 6.1 & 13.3 & 13.5

Thu. Sep 10, 2020 8:45 AM - 12:00 PM Z24

Hironori Fujisawa(Univ. of Hyogo), Shosuke Fujii(Kioxia)

11:45 AM - 12:00 PM

[10a-Z24-12] Investigation of Polarization-Induced Inversion Charge Density in Si Ferroelectric FETs

Kasidit Toprasertpong1, Zaoyang Lin1, Tsung-En Lee1, Mitsuru Takenaka1, Shinichi Takagi1 (1.Univ. Tokyo)

Keywords:Ferroelectric FET (FeFET), Operation mechanism, Memory window

In this work, we investigate the bahavior of inversion electrons and holes in Hf0.5Zr0.5O2/Si FeFETs. While the hole inversion layer can be efficiently formed under the p-FeFET gate stack, electrons in n-FeFET are almost trapped. This coupling between the polarization and the inversion charge is found to largely affect the device characteristics of FeFETs.