[10a-Z24-1~12] 【CS.5】 Code-sharing Session of 6.1 & 13.3 & 13.5

[10a-Z24-12] Investigation of Polarization-Induced Inversion Charge Density in Si Ferroelectric FETs

〇Kasidit Toprasertpong¹, Zaoyang Lin¹, Tsung-En Lee¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

Keywords:Ferroelectric FET (FeFET), Operation mechanism, Memory window

In this work, we investigate the bahavior of inversion electrons and holes in Hf_0.5Zr_0.5O₂/Si FeFETs. While the hole inversion layer can be efficiently formed under the p-FeFET gate stack, electrons in n-FeFET are almost trapped. This coupling between the polarization and the inversion charge is found to largely affect the device characteristics of FeFETs.