The 81st JSAP Autumn Meeting, 2020

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CS Code-sharing session » 【CS.5】 Code-sharing Session of 6.1 & 13.3 & 13.5

[10a-Z24-1~12] 【CS.5】 Code-sharing Session of 6.1 & 13.3 & 13.5

Thu. Sep 10, 2020 8:45 AM - 12:00 PM Z24

Hironori Fujisawa(Univ. of Hyogo), Shosuke Fujii(Kioxia)

10:00 AM - 10:15 AM

▼ [10a-Z24-6] Ferroelectric Properties of Hafnium-Zirconium-Dioxide Prepared by Chemical Solution Process for MFM and MFS Structures

〇(D)Mohit Mohit1, Eisuke Tokumitsu1 (1.School of Materials Science, JAIST)

Keywords:Hafnium Zirconium Dioxide, Chemical Solution Process, Ferroelectric FET

Y-HZO thin films were fabricated by CSD and electrical properties of MFM and MFS structures were characterized. Vacuum annealed Y-HZO film showed better ferroelectricity than N2 and O2 annealed samples.