[10a-Z24-1~12] 【CS.5】 Code-sharing Session of 6.1 & 13.3 & 13.5

[10a-Z24-3] A preliminary study on ferroelectric synaptic device using mist CVD-derived Hf_1-xZr_xO₂ ferroelectric thin film

〇(M1)Yuki Fujiwara¹, Daisuke Tahara¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹, Minoru Noda¹ (1.Kyoto Inst. Tech.)

Keywords:hafnium zirconium oxide, mist CVD, ferroelectric

We have newly developed mist CVD-derived Hf_1-xZr_xO₂ films and investigated their physical properties and basic electrical properties for application to ferroelectric analog memory device such as synaptic device for neuromorphic system. Both HfO₂ and ZrO₂ film with 20 nm thickness showed good fatigue endurance against 10⁹ counts of imposed pulse cycling, where some wakeup phenomena were observed. For a range of electric field (up to 1.5 MV/cm) as memory-writing input with condition of minor ferroelectric hysteresis loop, a linear relationship between the input and resultant polarization at zero electric field, P(E=0), was obtained. Finally, it is suggested that those films of HfO₂, Hf_0.55Zr_0.45O₂ and ZrO₂ are basically applicable for the ferroelectric analog memory device. Further investigation is needed in view of basic film properties to improve more both the resultant linearity and the endurance performance.