[10a-Z26-1~8] 9.1 誘電材料・誘電体

▲ [10a-Z26-7] High temperature alternating current poling for 0.24Pb(In_1/2Nb_1/2)O₃-0.46Pb(Mg_1/3Nb_2/3)O₃-0.30PbTiO₃ single crystals

〇(M2C)Cong Luo^1,2、Yiqin Sun²、Tomoaki Karaki²、Yohachi Yamashita²、Jiayue Xu¹ (1.Shanghai Inst. Tech.、2.Toyama Pref. Univ.)

キーワード：high temperature, alternating current poling, PIMN-0.30PT

Recently, an increasing number of researchers have focused on Pb(In_1/2Nb_1/2)O₃-Pb(Mg_1/3Nb_2/3)-PbTiO₃ (PIN-PMN-PT) ternary system single crystal (SC) possessing higher phase change temperature (Tpc) > 90 ^oC, which can be used in wider temperature range comparing with traditional PMN-xPT binary system SC. In this work, we have investigated high temperature alternate current poling (ACP) on [001] oriented 0.24PIN-0.46PMN-0.30PT (PIMN-0.30PT) SC manufactured by continuous-feeding Bridgman (CF BM) method which can partly eliminate the compositional segregation compared with the traditional one charge Bridgman method. High dielectric permittivity (ε^T₃₃/ε₀) of 6730 and piezoelectric constant d₃₃ of 2240 pC/N, which were both 24% larger than those of direct current poling (DCP) using same poling voltage, was obtained by the ACP condition of 4 kVrms/cm, 10 Hz, and 12 cycles at 90 ^oC. Temperature dependence of these ε^T₃₃/ε₀ (Fig. 1) and phase analysis by X-ray diffraction (XRD) (Fig. 2) of these ACP and DCP SCs showed clear different properties. We concluded that the best ACP poling temperature for CF BM PIMN-0.30PT SC is 90 ^oC which is almost as same as its Tpc.