The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[10p-Z02-1~22] 15.4 III-V-group nitride crystals

Thu. Sep 10, 2020 1:00 PM - 7:15 PM Z02

Narihito Okada(Yamaguchi Univ.), Ryota Ishii(Kyoto Univ.), Hideaki Murotani(Tokuyama College)

7:00 PM - 7:15 PM

[10p-Z02-22] In-situ photoluminescence of GaN photoelectrode during water splitting reaction

Tsutomu Minegishi1, Soraya Shizumi2, Ogus Ciftci2, Yuki Imazeki2, Masakazu Sugiyama1,2 (1.RCAST, The Univ. of Tokyo, 2.EEIS, The Univ. of Tokyo)

Keywords:photocatalyst, photoelectrode, hydrogen, photoluminescence

GaN is one of the candidates of photocatalyst and/or photoelectrode owing to its stability and electronic structure. In the present study, in-situ photoluminescence (PL) of GaN photoelectrode during water splitting reaction was investigated. PL measurement with scanning applied potential detected quench of PL because of facilitated charge separation at above the flat-band potential. In addition, the broad emission related to the surface states were also quenched by increase of potential. In the presentation, activation and deactivation of states by applied potential, and influence of them on reaction will be discussed.