[10p-Z02-1~22] 15.4 III-V-group nitride crystals

[10p-Z02-3] Initial growth control of GaN crystals by low pressure acidic ammonothermal method

〇Daisuke Tomida¹, Saskia Schimmel¹, Makoto Saito^2,3, Quanxi Bao^2,4, Kouhei Kurimoto⁴, Tohru Ishiguro², Shigefusa Chichibu^1,2, Yoshio Honda¹, Hiroshi Amano¹ (1.IMaSS Nagoya Univ., 2.IMRAM Tohoku Univ., 3.Mitsubishi Chemical Corp., 4.Japan Steel Works)

Keywords:gallium nitride, ammonothermal method, bulk crystal

In the crystal growth by the solution method, it is well known that a crystal having excellent crystallinity can be fabricated by gradually lowering the temperature from a saturated solution. In the LPAAT method using NH₄F as a mineralizer, the temperature dependence of the solubility shows a negative correlation, so that it is expected to fabricate GaN crystals with excellent crystallinity by gradually raising the temperature from a saturated solution. In this study, we report the effect of initial growth control on GaN crystal growth.