[10p-Z04-1~17] 13.7 Compound and power electron devices and process technology

△ [10p-Z04-12] Tempereture Dependence of Anomalous Fixed Charge Generation due to Forming Gas Annealing in SiO₂/GaN MOS devices

〇Hidetoshi Mizobata¹, Yuhei Wada¹, Mikito Nozaki¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

Keywords:Gallium Nitride (GaN), Metal-Oxide-Semiconductor (MOS), Forming Gas Annealing (FGA)

When the SiO₂/GaN MOS structure is subjected to forming gas annealing (FGA), fixed positive charges are generated at the SiO₂/GaN interface and the flatband voltage (V_FB) is significantly shifted to the negative bias direction. In this study, we discussed the physical origin based on the annealing temperature dependence. The negative V_FB shift began above 250°C. Compared with the previous report, the result suggested that the physical origin of fixed charges was oxygen vacancies generated at the gallium oxide interlayer.