[10p-Z04-1~17] 13.7 Compound and power electron devices and process technology

[10p-Z04-5] Two-dimensional characterization of PEC gate-recess-etched AlGaN/GaN HEMT structure by scanning internal photoemission microscopy

〇Yuto Kawasumi¹, Fumimasa Horikiri², Noboru Fukuhara², Kenji Shiojima¹ (1.Univ. of Fukui, 2.SCIOCS Co.)

Keywords:Gallium nitride, etching

We studied two-dimensional characterization of Au/Ni Schottky electrodes formed on the PEC gate-recess-etched AlGaN/GaN HEMT structure by scanning internal photoemission microscopy. The photocurrent decreased 0.4 times in the etching region compared with the non-etching region, and increased more than 1.5 times in the periphery of the etching region about 20 μm in width. The shape of the etching region is reflected in the photocurrent image.