[10p-Z08-11~17] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▼ [10p-Z08-12] Energy barrier of X/1X-nm shape-anisotropy magnetic tunnel junctions at high temperature

〇Junta Igarashi¹、Butsurin Jinnai²、Valentin Desbuis³、Stephane Mangin³、Shunsuke Fukami^1,2,4,5,6、Hideo Ohno^1,2,4,5,6 (1.RIEC, Tohoku Univ.、2.WPI-AIMR, Tohoku Univ.、3.IJL, Lorraine Univ.、4.CSRN, Tohoku Univ、5.CSIS, Tohoku Univ、6.CIES, Tohoku Univ)

キーワード：Magnetic tunnel junction, Shape-anisotropy