[10p-Z15-1~10] 先端イオン源顕微鏡技術：ナノ材料・デバイス、生命科学への展開

▲ [10p-Z15-5] Application of Neon Ion Beam for Processing III-V Semiconductors and Atom Probe Sample Preparation of Ga Sensitive Materials

Deying Xia²、〇Hanfang Hao¹、Vignesh Viswanathan¹、John Notte² (1.Carl Zeiss Pte Ltd、2.Carl Zeiss SMT Inc.)

キーワード：Neon Ion Beam, Atom Probe Tomography, III-V Semiconductor

Focused ion beam (FIB) milling using Gallium ions is routinely used for the site-specific sample preparation of cross-sections, Transmission Electron Microscopy (TEM) lamella and Atom Probe Tomography (APT) tips. While the Ga FIB has been a versatile tool on a variety of materials, there are exceptions such as Al, In, Sn and III-V semiconductors where Ga irradiation and implantation causes detrimental effects including intermixing, implantation and accumulation of Gallium at the surface and grain boundaries, and Ga droplet formation. With the advent of novel FIB sources, alternative ion species for precision milling are now available. For example, Ne-FIB-milling as the final polishing step in the preparation of TEM lamella has been demonstrated as an alternative approach for samples in which gallium contamination cannot be tolerated. In this contribution, we present results from the application of Ne ions in the milling GaAs and final polishing of APT tips.