[10p-Z23-1~16] 15.6 Group IV Compound Semiconductors (SiC)

[10p-Z23-5] Rapid Cleaning of SiC CVD Reactor Using ClF₃ Gas

〇Masaya Hayashi¹, Takumi Mamyouda¹, Hitoshi Habuka¹, Akio Ishiguro², Shigeaki Ishii², Yoshiaki Daigo², Hideki Ito², Ichiro Mizushima², Yoshinao Takahashi³ (1.Yokohama Nat. Univ, 2.NuFlare Technology, 3.KANTO DENKA KOGYO)

Keywords:cleaning, Silicon Carbide, Dry etching

At the CVD of Silicon Carbide, fine particles due to the peeling of SiC film deposited on the susceptor is the problem. Therefore, the cleaning process to remove the SiC film has been developed. So far, the process using chlorine trifluoride gas has been proposed. It has been confirmed that SiC film can be removed at about 500°C using ClF₃ gas and purified pyrolytic carbon as the protective film of the susceptor. In this report, we cleaned the samples with the coating film of purified pyrolytic carbon using 5~100% ClF₃ gas at 500°C and investigated the conditions which enable the quick cleaning of SiC film within 10 minutes.