[11a-Z01-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

[11a-Z01-3] Growth of β-Fe_1-xRu_xSi₂ polycrystalline thin film by sputtering method

〇Taisuke Shinomura¹, Hiroki Nishi¹, Yoshikazu Terai¹ (1.Kyusyu Inst. of Tech)

Keywords:Silicide semiconductor, beta-FeSi2

we have prepared a β-FeSi₂ polycrystalline thin film by the sputtering method and evaluated the emission of 1.5 μm. However, the band transition of β-FeSi₂ is dominated by the d orbital of Fe, and there is a problem that the transition probability is low. On the other hand, in the band structure of Ru₂Si₃, it has been reported that at the top of the valence band, an mixed orbit of Ru d orbitals and Si p orbitals occurs. Therefore, it is expected that by substituting some of the Fe atoms in β-FeSi₂ with Ru, pd hybrid orbitals are induced in the valence band and the band transition probability increases. In this study, therefore, Ru was doped to the β-FeSi₂ polycrystalline thin film to prepare a mixed crystal β-Fe_1-xRu_xSi₂ polycrystalline thin film.