[11a-Z01-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

△ [11a-Z01-4] Increase of resistance switching ratio in the Fe3O4 film memory including iron silicide nanodots by locally intensifying electric field

〇Takafumi Ishibe¹, Nobuyasu Naruse², Yutaka Mera², Yoshiaki Nakamura¹ (1.Osaka Univ., 2.Shiga Univ. Medical Science)

Keywords:Iron silicide, Resistive switching memory, Nanodot

Fe3O4 film/Si is more advantageous than other resistive switching material in terms of good compatibility with Si process, low-cost ecofriendly material, etc. We have developed epitaxial Fe3O4 film/a-FeSi2 layer/Si sandwitch structure, and achieved high Off/On resistance ratio of ~140, which is the maximum value in nanoscale Fe3O4 material. However, further increase of Off/On resistance ratio is strongly required for social use. In this study, we greatly increase Off/On resistance ratio by introducing metal a-FeSi2 nanodot in Fe3O4 film, where a-FeSi2 nanodot works as the site that an electric field is locally intensified, and the higher electric field promotes oxygen ion movement.