Takafumi Ishibe

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Speaker, Author, Co-Author

Fri. Sep 11, 2020 8:30 AM - 11:30 AM Z01

Oral presentation
| 13 Semiconductors
| 13.2 Exploratory Materials, Physical Properties, Devices

[11a-Z01-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

9:15 AM - 9:30 AM

△ [11a-Z01-4] Increase of resistance switching ratio in the Fe3O4 film memory including iron silicide nanodots by locally intensifying electric field

〇Takafumi Ishibe¹, Nobuyasu Naruse², Yutaka Mera², Yoshiaki Nakamura¹ (1.Osaka Univ., 2.Shiga Univ. Medical Science)