The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[11a-Z01-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 11, 2020 8:30 AM - 11:30 AM Z01

Takashi Suemasu(Univ. of Tsukuba), Kosuke Hara(Univ. of Yamanashi)

9:30 AM - 9:45 AM

[11a-Z01-5] Mg2Si at high pressures and high temperatures

Motoharu Imai1, Soshi Ibuka1, Yukihiro Isoda1 (1.NIMS)

Keywords:Mg2Si, high pressure, structural phase transition

In this study, we investigated the phase behavior of Mg2Si at high pressures ranging from 0 to 10 GPa and high temperatures ranging from 300 to 1500 K by in-situ observation using X-ray diffraction (XRD) measurement. No structural phase transition was observed when Mg2Si was compressed up to 10 GPa at room temperature. In heating at the pressures above 3 GPa, Mg2Si underwent a structural phase transition to a high-pressure and high-temperature (HPHT) phase. Thus, in this p-T region, one HPHT phase was observed.