Oral presentation

[11a-Z01-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 11, 2020 8:30 AM - 11:30 AM Z01

Takashi Suemasu(Univ. of Tsukuba), Kosuke Hara(Univ. of Yamanashi)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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8:30 AM - 8:45 AM

[11a-Z01-1] Single crystal growth of (InGaO₃)_m(ZnO)_n(m = 1, 2 n = 1, 3) and physical property

〇Yusuke Kawamura¹, Yuki Kobayashi, Naoki Kase¹, Nobuaki Miyakawa¹ (1.Tokyo Univ of Science)

8:45 AM - 9:00 AM

[11a-Z01-2] Effect of low-rate-growth of BaSi₂ thin film on film quality

〇Shunnosuke Mori¹, Souma Nishio¹, Katsushi Nishino¹ (1.Tokushima Univ.)

9:00 AM - 9:15 AM

[11a-Z01-3] Growth of β-Fe_1-xRu_xSi₂ polycrystalline thin film by sputtering method

〇Taisuke Shinomura¹, Hiroki Nishi¹, Yoshikazu Terai¹ (1.Kyusyu Inst. of Tech)

9:15 AM - 9:30 AM

△ [11a-Z01-4] Increase of resistance switching ratio in the Fe3O4 film memory including iron silicide nanodots by locally intensifying electric field

〇Takafumi Ishibe¹, Nobuyasu Naruse², Yutaka Mera², Yoshiaki Nakamura¹ (1.Osaka Univ., 2.Shiga Univ. Medical Science)

9:30 AM - 9:45 AM

[11a-Z01-5] Mg₂Si at high pressures and high temperatures

〇Motoharu Imai¹, Soshi Ibuka¹, Yukihiro Isoda¹ (1.NIMS)

10:00 AM - 10:15 AM

[11a-Z01-6] Relationship between Ba to Si deposition rate ratios and the optical properties of As-doped n-BaSi₂ epitaxial films

〇Sho Aonuki¹, Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

10:15 AM - 10:30 AM

[11a-Z01-7] Relationship between post annealing conditions and optical properties of undoped BaSi₂ films

〇Yurika Haku¹, Yudai Yamashita¹, Toko Kaoru¹, Suemasu Takashi¹ (1.Univ. of Tsukuba)

10:30 AM - 10:45 AM

[11a-Z01-8] Investigation of photoresponse in n-Ru₂Si₃/p-Si pn junctions (II)

〇Hiroki Nishi¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

10:45 AM - 11:00 AM

[11a-Z01-9] Investigation of the effect of RF power on the photoresponsivity of BaSi₂ films formed by RF sputtering

〇Taira Nemoto¹, Ryota Koitabashi¹, Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Tosoh Corp.)

11:00 AM - 11:15 AM

[11a-Z01-10] Photoresponse properties of BaSi₂ films sputtered on glass substrates

〇Ryota Koitabashi¹, Taira Nemoto¹, Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Tosoh Corporation)

11:15 AM - 11:30 AM

[11a-Z01-11] Photosensitivity of Mg₂Si PDs with Au/Mo and Au/Pt mesh-electrode

〇Yudai Ichikawa¹, Daisuke Niioka¹, Takeru Miyauchi¹, Misa Yoshida², Daiju Tsuya², Haruhiko Udono¹ (1.Ibaraki Univ., 2.NIMS)

Oral presentation

[11p-Z01-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 11, 2020 12:30 PM - 3:30 PM Z01

Yoshiaki Nakamura(Osaka Univ.), Kenji Yamaguchi(QST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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12:30 PM - 12:45 PM

[11p-Z01-1] Electrical properties of Mg₂Sn crystals grown from various Mg-Sn melt compositions

〇Naofumi Tsuchiya¹, Sho Sato¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

12:45 PM - 1:00 PM

[11p-Z01-2] Carrier lifetime of Mg₂Si pn-junction diode measured by OCVD method (II)

〇(M1)Naoki Mizunuma¹, Fumiya Takahashi¹, Rio Okada¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

1:00 PM - 1:15 PM

▲ [11p-Z01-3] Optical properties improvement of lightly and heavily boron-doped BaSi₂ by atomic H passivation

〇(D)Zhihao Xu¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

1:15 PM - 1:30 PM

[11p-Z01-4] Evaluation of thermoelectric properties of Sb-doped BaSi₂ films on CaF₂ substrates

〇Ryuichi Yoshida¹, Mikie Tsuji¹, Sho Aonuki¹, Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

1:30 PM - 1:45 PM

[11p-Z01-5] Device simulation of BaSi₂ solar cells exhibiting theoretical limit efficiency

〇Kosuke Hara¹ (1.CCST, Univ. of Yamanashi)

1:45 PM - 2:00 PM

△ [11p-Z01-6] Modeling and demonstration of n⁺-AZO/p-BaSi₂ heterojunction solar cells by 3D-opt&electrical simulations

〇Yudai Yamashita¹, Carlos M. Ruiz Tobon², Rudi Santbergen², Olindo Isabella², Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.TU Delft)

2:15 PM - 2:30 PM

[11p-Z01-7] Investigation of visible light responsive defect states in electron-irradiated ZnO by positron annihilation lifetime spectroscopy and electron spin resonance

〇(D)Makoto Nakajima^1,2, Atsushi Kinomura¹, Atsushi Yabuuchi¹, Kazuo Kuriyama³ (1.KURNS, Kyoto Univ., 2.Graduate School of Engineering, Kyoto Univ., 3.Hosei Univ.)

2:30 PM - 2:45 PM

△ [11p-Z01-8] Identification of paramagnetic and radiative defects in BaSi₂ for solar cell applications

〇Takuma Sato^1,2,3, Jean-Marie Mouesca³, Anne-Laure Barra⁴, Motoharu Imai⁵, Seiichiro Higashi¹, Serge Gambarelli³, Takashi Suemasu² (1.Hiroshima Univ., 2.Univ. Tsukuba, 3.CEA SyMMES, 4.LNCMI-CNRS, 5.NIMS)

2:45 PM - 3:00 PM

△ [11p-Z01-9] Evaluation of in-gap states of inorganic semiconductors by High Sensitivity Ultraviolet Photoemission Spectroscopy

〇(M1)Ryotaro Nakazawa¹, Kohei Shimizu¹, Yuya Tanaka^1,2, Ishii Hisao^1,2,3 (1.GSSE Chiba Univ., 2.CFS Chiba Univ., 3.MCRC Chiba Univ.)

3:00 PM - 3:15 PM

[11p-Z01-10] Local electronic states of hydrogen in the rutile-type MnO₂ II

〇Hirotaka Okabe¹, Ryosuke Kadono^1,2, Masatoshi Hiraishi¹, Akihiro Koda^1,2, Soshi Takeshita^1,2, Kenji Kojima³, Ichihiro Yamauchi⁴, Hirohiko Sato⁵ (1.KEK-IMSS, 2.SOKENDAI, 3.TRIUMF, 4.Saga Univ., 5.Chuo Univ.)

3:15 PM - 3:30 PM

[11p-Z01-11] Pieezoresistane Effects of Germanium (I)

〇Kazunori Matsuda¹, Souma Ikuta¹, Tomoya Nakatani¹, Shiro Nagaoka², Kazuo Tsutsui³ (1.Tokushima Bunri Univ., 2.NIT Kagawa, 3.Tokyo Ist. Tech.)

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[11a-Z01-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

[11a-Z01-1] Single crystal growth of (InGaO₃)_m(ZnO)_n(m = 1, 2 n = 1, 3) and physical property

[11a-Z01-2] Effect of low-rate-growth of BaSi₂ thin film on film quality

[11a-Z01-3] Growth of β-Fe_1-xRu_xSi₂ polycrystalline thin film by sputtering method

△ [11a-Z01-4] Increase of resistance switching ratio in the Fe3O4 film memory including iron silicide nanodots by locally intensifying electric field

[11a-Z01-5] Mg₂Si at high pressures and high temperatures

[11a-Z01-6] Relationship between Ba to Si deposition rate ratios and the optical properties of As-doped n-BaSi₂ epitaxial films

[11a-Z01-7] Relationship between post annealing conditions and optical properties of undoped BaSi₂ films

[11a-Z01-8] Investigation of photoresponse in n-Ru₂Si₃/p-Si pn junctions (II)

[11a-Z01-9] Investigation of the effect of RF power on the photoresponsivity of BaSi₂ films formed by RF sputtering

[11a-Z01-10] Photoresponse properties of BaSi₂ films sputtered on glass substrates

[11a-Z01-11] Photosensitivity of Mg₂Si PDs with Au/Mo and Au/Pt mesh-electrode

[11p-Z01-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

[11p-Z01-1] Electrical properties of Mg₂Sn crystals grown from various Mg-Sn melt compositions

[11p-Z01-2] Carrier lifetime of Mg₂Si pn-junction diode measured by OCVD method (II)

▲ [11p-Z01-3] Optical properties improvement of lightly and heavily boron-doped BaSi₂ by atomic H passivation

[11p-Z01-4] Evaluation of thermoelectric properties of Sb-doped BaSi₂ films on CaF₂ substrates

[11p-Z01-5] Device simulation of BaSi₂ solar cells exhibiting theoretical limit efficiency

△ [11p-Z01-6] Modeling and demonstration of n⁺-AZO/p-BaSi₂ heterojunction solar cells by 3D-opt&electrical simulations

[11p-Z01-7] Investigation of visible light responsive defect states in electron-irradiated ZnO by positron annihilation lifetime spectroscopy and electron spin resonance

△ [11p-Z01-8] Identification of paramagnetic and radiative defects in BaSi₂ for solar cell applications

△ [11p-Z01-9] Evaluation of in-gap states of inorganic semiconductors by High Sensitivity Ultraviolet Photoemission Spectroscopy

[11p-Z01-10] Local electronic states of hydrogen in the rutile-type MnO₂ II

[11p-Z01-11] Pieezoresistane Effects of Germanium (I)

Authenticate

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[11a-Z01-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

△ [11a-Z01-4] Increase of resistance switching ratio in the Fe3O4 film memory including iron silicide nanodots by locally intensifying electric field

[11p-Z01-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [11p-Z01-3] Optical properties improvement of lightly and heavily boron-doped BaSi2 by atomic H passivation

△ [11p-Z01-6] Modeling and demonstration of n+-AZO/p-BaSi2 heterojunction solar cells by 3D-opt&electrical simulations

△ [11p-Z01-8] Identification of paramagnetic and radiative defects in BaSi2 for solar cell applications

△ [11p-Z01-9] Evaluation of in-gap states of inorganic semiconductors by High Sensitivity Ultraviolet Photoemission Spectroscopy

Authenticate

▲ [11p-Z01-3] Optical properties improvement of lightly and heavily boron-doped BaSi₂ by atomic H passivation

△ [11p-Z01-6] Modeling and demonstration of n⁺-AZO/p-BaSi₂ heterojunction solar cells by 3D-opt&electrical simulations

△ [11p-Z01-8] Identification of paramagnetic and radiative defects in BaSi₂ for solar cell applications