[11a-Z01-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

[11a-Z01-8] Investigation of photoresponse in n-Ru₂Si₃/p-Si pn junctions (II)

〇Hiroki Nishi¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

Keywords:silicide semiconductor, silicide

So far, we have prepared a Ru₂Si₃ polycrystalline thin film with low electron density (~10¹⁶ cm^-3) and high mobility (~940 cm²/Vs) by solid-phase growth method. In contrast, we have reported that it exhibits a large optical absorption coefficient of α> 10⁵ cm^-1. In addition, we confirmed pn diode operation in the n-Ru₂Si₃/p-Si heterojunction, and revealed that its spectral sensitivity is about 4 times (at 1.3 eV) that of polycrystalline n-Si/p-Si homojunction. In this presentation, in order to investigate the spectral sensitivity of the n-Ru₂Si₃/p-Si heterojunction device in detail, we fabricated a heterojunction on two types of p-Si substrates, and examined their current-voltage (I-V) characteristics and temperature of spectral sensitivity. We report on the dependency evaluation.