[11a-Z04-1~9] 13.7 Compound and power electron devices and process technology

[11a-Z04-2] Investigation of origin of E3 trap in n-type GaN homoepitaxially grown by MOVPE

〇Masahiro Horita^1,2, Tetsuo Narita³, Tetsu Kachi², Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Toyota Central R&D Labs.)

Keywords:gallium nitride, deep level, impurity

The origin of E3 electron traps (E_C–0.6 eV, capture cross section~2×10^–15 cm²) in GaN was investigated. We considered the possibility of Fe atoms for the origin of E3 traps. For Si-doped n-type GaN layers grown on freestanding GaN substrates using MOVPE, the Fe concentration assessed by SIMS and the E3 trap concentration determined by DLTS were compared. A correlation was evident between Fe and E3 concentrations in the range (0.4–12)×10¹⁵ cm^–3, suggesting that the E3 level originates from the substitution of Fe atoms.