[11a-Z04-1~9] 13.7 Compound and power electron devices and process technology

[11a-Z04-4] Forward bias DLTS in MOVPE p-GaN annealed for a long time

〇(M2)Hikaru Yoshida¹, Wakana Takeuchi¹, Yutaka Tokuda¹, Tetsuo Narita², Kazuyoshi Tomita^2,3, Tetsu Kachi³ (1.Aichi Inst. of Technol., 2.Toyota Central R&D Labs., Inc., 3.Nagoya University)

Keywords:p-GaN, Mg-doped p-GaN

We studied the effect of annealing time at 850ºC on the minority carrier (electron) traps on Mg-doped p-GaN grown by MOVPE using forward bias DLTS measurement. The activation annealing at 850 °C was performed for 5 min and 300 min. The localized state density of p-GaN annealed for 5 min was 1.4x10¹⁵ eV^-1 cm^-3 or less in the range of E_c – 0.3 to 0.8 eV. The p-GaN annealed for 300 min has a high localized state density of 1.5x10¹⁵ to 1.5x10¹⁶ eV^-1 cm^-3, which indicates the formation of a high concentration of minority carrier traps by long annealing time.