[11a-Z04-1~9] 13.7 Compound and power electron devices and process technology

[11a-Z04-5] Temperature dependence of carrier mobility on InAlN/(AlN)/GaN heterostructures

〇Yasuki Kimura¹, Takuya Hoshii¹, Kiyotaka Miyano², Masayuki Tsukui², Ichiro Mizushima^1,2, Takashi Yoda^1,2, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.NuFlare Technology Inc.)

Keywords:InAlN/GaN, 2DEG, mobility