[11a-Z04-1~9] 13.7 Compound and power electron devices and process technology

[11a-Z04-6] Implantation of Mg ion into GaN substrate on a channeling condition (III)

〇Tomoaki Nishimura¹, Kiyoji Ikeda¹, Tetsu Kachi² (1.Hosei Univ., 2.Nagoya Univ.)

Keywords:GaN, ion implantation, channeling

We have previously reported the experimental results of ion implantation of Mg into GaN under a channeling condition. In this study, the lateral spread of Mg was studied using channeling simulation based on Monte Carlo calculation of ion trajectories. As a result, the lateral distribution of Mg is extremely narrower than that of random implantation. Therefore, it was found that a uniform implantation distribution reflecting the mask shape is obtained even at the near edge of the mask.