[11a-Z04-1~9] 13.7 Compound and power electron devices and process technology

[11a-Z04-7] Traps in MOVPE p-GaN produced by He ion implantation

〇Yutaka Tokuda¹, Hikaru Yoshida¹, Kazuyoshi Tomita², Tetsu Kachi², Joji Ito³, Takahide Yagi³ (1.Aichi Inst. Technol., 2.Nagoya University, 3.SHI-ATEX Co., Ltd)

Keywords:p-GaN, traps

We have studied traps in MOVPE grown p-GaN induced by He ion implantation. 1 MHz-capacitance DLTS measurements were performed in the temperature range from 200 to 350 K for the n⁺p GaN on the GaN substrate. Two hole traps labeled H_α (E_v+0.48 eV) and H_β (E_v+0.71 eV) are induced by He ion implantation. Electron traps were studied by DLTS using forward bias injection pulses, which suggests the production of electron traps with continuously distributed energy levels. Again, we performed hole trap DLTS measurements, which indicated a change in DLTS spectra. The change observed in hole DLTS spectra might be related to (1) thermal stability even at 350 K, or (2) the change of thermal stability due to the change of the charge state due to the minority carrier injection, or (3) the occurrence of the recombination enhanced defect reaction.