11:15 AM - 11:30 AM
▲ [11a-Z07-9] Fabrication of Bismuth Vanadate photocatalyst films from single target by RF-sputtering method
Keywords:Bismuth vanadate film, RF-sputtering, Photocatalyst
Bismuth vanadate (BiVO4), which is used as an oxygen generation electrode in a two-step photoexcitation water splitting photoelectrode system (Z-scheme), has a bandgap (2.4 eV) that responds to visible light, as well as has not only a suitable band alignment for H2/O2 evolution reaction, but also ideal properties such as moderate stability in the solution of pH 3-10 [1]. So far, there are several methods fabricating BiVO4 films. Sputtering is one of the potential methods due to its merits of film uniformity and adhesion as a facile physical way. As we all know that the non-stoichiometry film is the obstacle in using single compound target, some researchers tactfully take advantages of co-sputtering successfully preparing BiVO4 films [2]. In this study, we explored the process of sputtering and finally got monoclinic scheelite phase (which is the optimal phase for photocatalysis) BiVO4 films by using single BiVO4 target.
The BiVO4 thin films were fabricated on the glass and fluorine-doped tin oxide (FTO) substrates by RF-sputtering with a BiVO4 target. The deposition was conducted at room temperature (RT) with Ar gas as plasma source. Working pressure was fixed at 0.7 Pa and that base pressure was 1.7 × 10-5 Pa. Following sputtering, annealing treatment was adopted and the oxygen was found to be the best atmosphere due to the incomplete oxidation state of vanadium. The various RF-power were studied to balance the ratio of Bi/V in the films. Then the annealing temperature was optimized as 400℃, which is suitable for formation of monoclinic scheelite phase. Eventually, the monoclinic scheelite BiVO4 films can be obtained at the condition of optimized process by using single BiVO4 target.
The BiVO4 thin films were fabricated on the glass and fluorine-doped tin oxide (FTO) substrates by RF-sputtering with a BiVO4 target. The deposition was conducted at room temperature (RT) with Ar gas as plasma source. Working pressure was fixed at 0.7 Pa and that base pressure was 1.7 × 10-5 Pa. Following sputtering, annealing treatment was adopted and the oxygen was found to be the best atmosphere due to the incomplete oxidation state of vanadium. The various RF-power were studied to balance the ratio of Bi/V in the films. Then the annealing temperature was optimized as 400℃, which is suitable for formation of monoclinic scheelite phase. Eventually, the monoclinic scheelite BiVO4 films can be obtained at the condition of optimized process by using single BiVO4 target.